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| HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single Die MOSFET VDSS IXFR 50N50 IXFR 55N50 ID25 RDS(on) 100 m 90 m 500 V 43 A 500 V 48 A trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, Pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C 50N50 55N50 50N50 55N50 50N50 55N50 Maximum Ratings 500 500 20 30 43 48 200 220 50 55 60 3 5 400 -40 ... +150 150 -40 ... +150 V V V V A A A A A A mJ J V/ns W C C C C V~ g ISOPLUS 247TM G D Isolated back surface* G = Gate S = Source D = Drain * Patent pending Features l l l l l 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<50pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.5 V 4.5 V 200 nA TJ = 25C TJ = 125C 50N50 55N50 25 A 2 mA 100 m 90 m l l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Note 1 DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages l l l Easy assembly Space savings High power density (c) 2002 IXYS All rights reserved 98588B (04/02) IXFR 50N50 IXFR 55N50 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 45 9400 VGS = 0 V, VDS = 25 V, f = 1 MHz 1280 460 45 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 1 (External), 60 120 45 330 VGS = 10 V, VDS = 0.5 VDSS, ID = IT 55 155 0.30 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS 247 OUTLINE gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V DS = 10 V; ID = IT Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 55N50 50N50 55N50 50N50 55 50 220 200 1.5 250 A A A A V ns C A See IXFK55N50 data sheet for characteristic curves. IF = 25A,-di/dt = 100 A/s, VR = 100 V 1.0 10 Note: 1. Pulse test, t 300 s, duty cycle d 2 % 2. IT test current: 50N50 IT = 25A 55N50 IT = 27.5A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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